Effects of transfort layers on luminescence efficiency of organic bilayer devices 輸運層對雙層器件電致發(fā)光效率的影響
A study and comparison of up - conversion luminescence efficiency in four er3 yb3 co - doped glasses 共摻四種玻璃中上轉(zhuǎn)換發(fā)光效率的比較及研究
This could increase the work function of ito , which would decrease the device threshold voltage and increase the luminescence efficiency consequently 因此,采用氧等離子體處理的ito薄膜作為oled的陽極將降低發(fā)光器件的開啟電壓,提高其發(fā)光效率。
Organic and polymer electroluminescence materials have attracted much interest because of its high luminescence efficiency , full color , processable and so on 有機電致發(fā)光材料由于具有高發(fā)光效率,亮度和顏色可調(diào),易加工成膜等優(yōu)良特性,引起了人們的極大興趣。
In order to clarify the origin of pl and enhance the luminescence efficiency of materials , the study of the relationship between preparation process and pl properties is very important 對制備方法及其工藝參數(shù)對薄膜熒光特性影響的研究,不僅可以進一步澄清各熒光帶的起因,而且也是提高材料發(fā)光性能的重要途徑。
Based on the above work , the optical absorption and photoluminescence ( pl ) properties of a - sinx : h films with different compositions are studied through ultraviolet - visible spectroscopy ( uv - vis ) and time - resolved photoluminescence ( tr - pl ) , the dependence of pl intensity decay on emission photon energy is found , the luminescence mechanism of nanosilicon embedded in silicon nitride matrix is presented , finally , the effective approaches to improving the luminescence efficiency of a - sinx : h films are discussed 在此基礎上,通過紫外-可見光譜( uv - vis )技術(shù),時間分辨光致發(fā)光譜技術(shù)研究了不同組分的富硅a - sin _ x : h薄膜的光吸收和光輻射特性,得到了材料光致發(fā)光衰減和輻射光子能量之間的關系,提出了鑲嵌在氮化硅中的納米硅的發(fā)光機制,進而探討了提高納米硅薄膜發(fā)光效率的有效途徑。
Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960 . the luminescence devices made with the materials had developed quickly . but the pure semiconductor materials could not better because the luminescence efficiencies were lower . doping is very important in order to improve the luminescence efficiency 半導體發(fā)光材料和器件是六十年代發(fā)展起來的半導體技術(shù)中的一個分支,單一的純凈本征半導體的性能往往不能滿足實際的需要,發(fā)光效率或發(fā)光幾率低,發(fā)光強度弱,提高發(fā)光效率的有效途徑就是進行材料的摻雜改性。